Answer Happy

True or false? If false, correct the statement:
a. In an p+-n- junction diode (NA >> ND), nearly all
depletion is in the n-type region, and the peak electric field at
the junction is almost independent of NA.
b. The forward current of a p-n junction diode is dominated by
the diffusion and recombination of majority carriers.
c. In a Schottky barrier diode, there are two types of
capacitances, i.e., the depletion capacitance and diffusion
capacitance.
d. In a Schottky contact, the energy barrier seen by electrons
in the metal is always the Schottky barrier height, regardless of
the applied bias across the metal and semiconductor.
e. Usually the reverse current of a p-n junction diode is more
sensitive to temperature as compared to that of a Schottky barrier
diode.
f. In a MOS structure with p-type semiconductor, if the
semiconductor work function is much smaller than the metal work
function, the MOS structure will produce an inversion layer after
reaching the thermal equilibrium.
g. For a MOS structure under the increasing bias applied between
the metal and semiconductor, after the bias exceeds the threshold
voltage, the semiconductor potential will keep increasing with the
applied bias.
h. In a MOSFET, when the drain-to-source voltage (VDS) exceeds
the saturation voltage (VDSsat), the channel electrostatics is
nearly independent of VDS to the first order.
i. Body effect will reduce the saturation current of the MOSFET
but not change VDSsat.
j. Body effect will reduce the saturation current of the MOSFET
but not change VDSsat.