An ideal silicon p–n junction has ND = 1018 cm–3, NA = 1016 cm–3, τp = τn = 10–6 s, and a device area of 1.2 × 10–5 cm2.
Posted: Mon May 09, 2022 7:26 am
An ideal silicon p–n junction has ND = 1018 cm–3, NA = 1016
cm–3, τp = τn = 10–6 s, and a device area of 1.2 × 10–5 cm2. (a)
Calculate the theoretical saturation current at 300 K. (b)
Calculate the forward and reverse currents at ±0.7 V.
For an ideal abrupt silicon p+–n junction with ND = 1016 cm–3,
find the stored minority carriers per unit area in the neutral
n-region when a forward bias of 1 V is applied. The length of
neutral region is 1 μm and the diffusion length of the holes is 5
μm. Hint: The total minority carrier charge can be found by
integrating the minority carriers over the region:
Need help with both of these questions
cm–3, τp = τn = 10–6 s, and a device area of 1.2 × 10–5 cm2. (a)
Calculate the theoretical saturation current at 300 K. (b)
Calculate the forward and reverse currents at ±0.7 V.
For an ideal abrupt silicon p+–n junction with ND = 1016 cm–3,
find the stored minority carriers per unit area in the neutral
n-region when a forward bias of 1 V is applied. The length of
neutral region is 1 μm and the diffusion length of the holes is 5
μm. Hint: The total minority carrier charge can be found by
integrating the minority carriers over the region:
Need help with both of these questions