At a p-n junction there is a built-in contact potential (arising from band bending). Evaluate this built-in voltage for
Posted: Thu May 05, 2022 6:04 pm
At a p-n junction there is a built-in contact potential
(arising from band bending). Evaluate this built-in voltage for
silicon, germanium, and GaAs. Assume equal
concentration of dopants
for n- and p-type regions;
1023 m-3. Assume also T=300K. Explain in
words what would happen to the contact potential as the temperature
of the sample is decreased to 1K and also when it is
increased to 1000K.
(arising from band bending). Evaluate this built-in voltage for
silicon, germanium, and GaAs. Assume equal
concentration of dopants
for n- and p-type regions;
1023 m-3. Assume also T=300K. Explain in
words what would happen to the contact potential as the temperature
of the sample is decreased to 1K and also when it is
increased to 1000K.