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Procedure PART 1. Threshold Voltage V₁ For both the silicon and the germanium diode, determine the threshold using the diode-checking capability of the DMM or a curve tracor. For this experiment the "firing voltages" obtained will establish the equivalent characteristics for each diode appearing in Fig. 3.2. Record the value of VT 25 obtained for each diode in Fig. 3.2. If the diode checking capability or curve tracer is unavailable, assume Vr = 0.7 V for silicon and VT= 0.3 V for germanium. Si 1. H Ge 0 VT= VT= Figure 3-2 Firing voltage for silicon and germanium. ▬▬▬▬▬▬▬▬▬▬▬▬▬▬▬▬▬▬▬▬▬
E SV Part 2. Series configuration a. Construct the circuit of Fig 3.3. Record the measured value of R. VD VD Supply + DMM Si IDY VR = Vo R22.2 ks Vo E R(meas) Figure 3-3 b. Using the results of Part 1 and the measured resistance for R, calculate the theoretical values of V, and Ip. Insert the level of VT for VD. ➜ DO MC ada dan