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Problem A particular process produces an n-channel MOSFET with the following properties: fox = 325 A L=0.8 am N₁ = 10¹6 cm³ W = 20 μm n* polysilicon gate rj = 0.35 μm Q = 10¹¹ cm-² The desired threshold voltage is VT=0.35 V at T = 300 K. Design an additional process to achieve this objective by using ion implantation, which produces a step function profile that is 0.35 um deep.
Problem ACMOS inverter is to be designed in which both the n-channel and p-channel devices have the same magnitude of doping concentration equal to 10¹6 cm-3, equal oxide thickness of tox= 150 Å, equal oxide trapped charge of Q'ss = + 8 x 1010 cm-2. The gate of the n channel is p+ poly and the gate of the p channel is n+ poly. Determine the type of ion implant and the implant dose in each device such that the final threshold voltages are VT N= +0.5 V and VT P = -0.5 V.