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Question 18 In an isolated n-type MOSCAP operating in the inversion mode, what is the nature and origin of the carriers at the oxide-semiconductor interface? O The carriers are holes coming from the electron-holes thermally generated in the bulk of the semiconductors O The carriers are electrons coming from the electron-holes thermally generated in the bulk of the semiconductors O The carriers are holes that tunneled from the bulk of the semiconductors O The carriers are holes that diffused from the bulk of the semiconductors The carriers are electrons that diffused from the bulk of the semiconductors Question 19 5 pts If you employ constant field scaling between different MOSFET generations, by what factor does the power dissipation density (i.e. power per unit area) change if the device dimensions are halved (i.e. a scaling factor k = 0.5)? 0 1 O 0.25 O 0.5 O 0.75 02 5 pts