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Question 12 5 pts Consider a bar of a p-type Si that is uniformly doped with N₁ = 2 × 10¹6 cm-³ at 300K. Light is illumi
Posted: Thu May 05, 2022 2:32 pm
by answerhappygod
- Question 12 5 Pts Consider A Bar Of A P Type Si That Is Uniformly Doped With N 2 10 6 Cm At 300k Light Is Illumi 1 (43.92 KiB) Viewed 20 times
Question 12 5 pts Consider a bar of a p-type Si that is uniformly doped with N₁ = 2 × 10¹6 cm-³ at 300K. Light is illuminating the left side of the material as shown in the figure below. Light p type x=0 The steady-state concentration of excess carriers at x = 0 is dp(0) = dn(0) = 2 × 10¹4 cm-³. Assume the following material properties: n = 1200 cm² /Vs, p = 400 cm² /Vs, Tno = 10-6s, Tp0 = 5 × 10- s. How far inside the semiconductor the excess electrons will go (order of magnitude)? O 10 cm Ⓒ 0.001 cm O 1 cm O 0.1 cm