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Posted: **Wed May 04, 2022 1:32 pm**

: Problem 2 4 37 5 Points Si Pin Photodiodes A Si Pin Photodiode Has The Following Characteristics And Responsivity R 1 (120.34 KiB) Viewed 45 times

: Problem 2 4 37 5 Points Si Pin Photodiodes A Si Pin Photodiode Has The Following Characteristics And Responsivity R 2 (92.91 KiB) Viewed 45 times

Problem 2.4 (37.5 points) (Si pin photodiodes) A Si pin photodiode has the following characteristics and responsivity: Responsivity(A/W) 0.6 0.5 Wavelength Active area Rise Junction Dark NEP [W Hz 1/2] 0.4 range diameter time capacitance current [nm] [mm] [ps] [pF] [PA] 0.3 400 - 1100 1.25 300 24 40 9 x 10-14 0.2 The reverse operation voltage for the photodiode is 100 V 0.1 0 (a) Cal 200 400 600 800 1000 120 Wavelength(nm)
(a) Calculate the i-layer thickness for this device and the internal electric field for a reverse bias of 100 V (&r~ 11). (b) Given that for the electric field at point (a) the drift velocity for the charge carriers, is around ~ 6 x 104 m/s, calculate the maximum drift time of the carriers across the i-layer. (c) Compare the drift time of the carriers with the rise time specified for this device. Explain the discrepancy.