In the dynamic random access memory (DRAM) of a computer, each memory cell contains a capacitor for charge storage. Each
Posted: Mon May 02, 2022 9:13 pm
In the dynamic random access memory (DRAM) of a computer, each
memory cell contains a capacitor for charge storage. Each of these
cells represents a single binary-bit value of 1 when its 25-fF
capacitor is charged at 1.5 V, or 0 when uncharged at 0 V. A DRAM
cell is shown in the (Figure 1). Suppose the two parallel plates of
one cell's 25-fF capacitor are separated by a 2.0-nm-thick
insulating material with dielectric constant K= 25.
a) Determine the area A (in μm^2) of the cell
capacitor's plates.
b) If the plate area A accounts for half of the area of
each cell, estimate how many megabytes of memory can be placed on
a 3.0-cm^2 silicon wafer.
(1 byte = 8 bits)
memory cell contains a capacitor for charge storage. Each of these
cells represents a single binary-bit value of 1 when its 25-fF
capacitor is charged at 1.5 V, or 0 when uncharged at 0 V. A DRAM
cell is shown in the (Figure 1). Suppose the two parallel plates of
one cell's 25-fF capacitor are separated by a 2.0-nm-thick
insulating material with dielectric constant K= 25.
a) Determine the area A (in μm^2) of the cell
capacitor's plates.
b) If the plate area A accounts for half of the area of
each cell, estimate how many megabytes of memory can be placed on
a 3.0-cm^2 silicon wafer.
(1 byte = 8 bits)