In a MOS image sensor containing an array of 3840 by 2160 pixels, each pixel’s photodiode has 80% quantum efficiency at
Posted: Mon May 02, 2022 4:27 pm
In a MOS image sensor containing an array of 3840 by 2160
pixels, each pixel’s photodiode has 80% quantum efficiency at 550nm
wavelength and a capacitance of 4 femtofarads. The vertical signal
line has a total capacitance of 9 pF. The input resistance of the
transversal signal line preamplifier is 1 megaohm.
(a) Calculate the noise equivalent bandwidth of the image
sensor.
(b) Calculate the charge produced by light falling onto the
image pixel when it is used to take a photograph with an exposure
time of 5ms and there is 200pW of optical power (at 550nm
wavelength) incident onto the pixel.
(c) Calculate the mean fluctuation in charged introduced by KTC
noise at room temperature (300K) during the charge transfer from
the pixel to the vertical signal line, and hence the signal to
noise ratio in decibels when 200pW optical power (550nm wavelength)
falls onto the pixel.
pixels, each pixel’s photodiode has 80% quantum efficiency at 550nm
wavelength and a capacitance of 4 femtofarads. The vertical signal
line has a total capacitance of 9 pF. The input resistance of the
transversal signal line preamplifier is 1 megaohm.
(a) Calculate the noise equivalent bandwidth of the image
sensor.
(b) Calculate the charge produced by light falling onto the
image pixel when it is used to take a photograph with an exposure
time of 5ms and there is 200pW of optical power (at 550nm
wavelength) incident onto the pixel.
(c) Calculate the mean fluctuation in charged introduced by KTC
noise at room temperature (300K) during the charge transfer from
the pixel to the vertical signal line, and hence the signal to
noise ratio in decibels when 200pW optical power (550nm wavelength)
falls onto the pixel.