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4. (a) Based on electron energy band structures, discuss reasons for the difference in electrical conductivity between m
Posted: Mon May 02, 2022 3:56 pm
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4. (a) Based on electron energy band structures, discuss reasons for the difference in electrical conductivity between metals and semiconductors (10 points). (b) For semiconductors, the intrinsic carrier concentration n depends on temperature as follows: ni o exp(-E,/2KT). Using the data presented in the following Figure, determine the band gap energies for silicon (5 points) and germanium (5 points). 1020 1045 1024 1022 activity changes in 1010 Intrinsic carrier concentration (m) 1016 Jold 1012 lo to 100 10 LLLLLL 0 200 400 600 800 1000 1200 1400 1600 1800 T(K)