The carrier mobility of an organic semiconductor layer can be
measured by the time-of-flight
(TOF) photoconductivity measurement. Fig.1(a) is a schematic
diagram of the TOF set-up,
and Fig.1 (b) is the typical TOF transient measured for a 10 μm
thick NPB film sandwiched
between an ultrathin Al cathode and an ITO anode. From the constant
current plateau in the
TOF measurement, as shown in Fig.1(b), the transit time thus
obtained for the NPB sample is
9 μs.
(a) Calculate the carrier mobility in NPB layer.
(b) Explain what type of the carriers, i.e., hole or electron
mobility, was measured in the
experiment.
Al (15nm) ITO 10 Laser DC NPB Oscilloscop 200 V | d R Photocurrent(uA) 0 30 10 20 Time(us) Fig. 1 (a) Fig. 1 (b)
The carrier mobility of an organic semiconductor layer can be measured by the time-of-flight (TOF) photoconductivity me
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The carrier mobility of an organic semiconductor layer can be measured by the time-of-flight (TOF) photoconductivity me
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