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Question 3: Photon absorption and generation rate. (10 points total) In this question we will consider only the incident light at normal incidence to a solar cell and having a wavelength of 800 nm. At this wavelength, the absorption coefficient of silicon is measured to be 1000 cm Conversion factors: W = 4 1eV = 1.602 x 10-19 a) Determine the energy of the 800 nm photon. (Points 1) b) What is the numerical value of the penetration depth of photons at this wavelength in silicon? (Points 1) c) If the incident irradiance of the 800 nm wavelength photon beam is 100 W/m, determine the remaining irradiance after the beam has penetrated 20 um below the silicon surface. Neglect any reflection losses. (Points 2) d) If the incident irradiance of 800 nm wavelength photon beam is 100 W/m?, determine the electron-hole generation rate at a depth of 20 um below the silicon surface. Neglect any reflection losses. (Points 4) e) of the silicon material is characterised with a typical carrier lifetime (for electrons) of 10 MS and the mobility for electrons is 1350 cm /Vs, determine the average distance an electron can travel before recombination takes place. (Points 2)