- 3 A Silicon Based N P N Bipolar Transistor Is Uniformly Doped With Nb 5 1016cm 3 And Nc 8 1015cm 3 The Metallur 1 (267.79 KiB) Viewed 21 times
3. A silicon based n-p-n bipolar transistor is uniformly doped with NB = 5 * 1016cm-3 and Nc = 8* 1015cm-3. The metallur
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3. A silicon based n-p-n bipolar transistor is uniformly doped with NB = 5 * 1016cm-3 and Nc = 8* 1015cm-3. The metallur
3. A silicon based n-p-n bipolar transistor is uniformly doped with NB = 5 * 1016cm-3 and Nc = 8* 1015cm-3. The metallurgical base width is XBo = 0.50um with VBE = OV and VcB = OV. (a) Determine the expected avalanche B-C breakdown voltage. Refer the figure 7.15. (b) Calculate the value of VCB at which punch-through occurs. Impurity concentration Ng (cm - 3) 1015 1016 1017 1014 1000 1018 1000 T = 300 K GaAs 100 One-sided abrupt junction 100 Breakdown voltage VR (V) the 10 10 Linearly graded junction 1 1020 1024 1021 1022 1023 Impurity gradient a (cm - 4) Figure 7.15 | Breakdown voltage versus impurity concen- tration in uniformly doped and linearly graded junctions. (From Sze [14].)
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