- 3 25 N Mosfet Under Saturation O Vas Inversion Charge Vos Al L Plype Vos Sat Vas V Avo Vos Vas Sat A As 1 (93.12 KiB) Viewed 20 times
(3) (25%) n-MOSFET under saturation O Vas Inversion charge Vos AL L plype -Vos (sat) - Vas-V AVO = Vos - Vas(sat) (a) As
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(3) (25%) n-MOSFET under saturation O Vas Inversion charge Vos AL L plype -Vos (sat) - Vas-V AVO = Vos - Vas(sat) (a) As
(3) (25%) n-MOSFET under saturation O Vas Inversion charge Vos AL L plype -Vos (sat) - Vas-V AVO = Vos - Vas(sat) (a) Assume that the horizontal channel can be simplified as nt-p-nt configuration. By utilizing p-n junction model, verify that the channel reduction AL as shown above can be expressed by løpl + Vps(sat) |2es AL = [@pl + Vps(sat) + AVDS qN where AVps = Vps - Vps(sat), ºp = kr/qin ( (15%) (b) Assume that Ng = 2 x 1016 cm", Vr= 0.4 V, L = 1 um, Vas = 1 V, Vps = 2.5 V, find the channel current ratio between the normal current ID to the reduced channel one Id', which is inversely proportional to L/(L-AL). (10%)
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