q=1.6x10-19C, KBT/q= 26mV, Mn=1350cm2/(V.s), Mp=480cm

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answerhappygod
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q=1.6x10-19C, KBT/q= 26mV, Mn=1350cm2/(V.s), Mp=480cm

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Q 1 6x10 19c Kbt Q 26mv Mn 1350cm2 V S Mp 480cm V N 1x1010 Cm3 T 300k Fig 1 Shows A Rectangular Bar Of 1
Q 1 6x10 19c Kbt Q 26mv Mn 1350cm2 V S Mp 480cm V N 1x1010 Cm3 T 300k Fig 1 Shows A Rectangular Bar Of 1 (58.4 KiB) Viewed 40 times
q=1.6x10-19C, KBT/q= 26mV, Mn=1350cm2/(V.s), Mp=480cm</(V.), n;= 1x1010/cm3 (@T=300K) Fig. 1 shows a rectangular bar of p-type semiconductor. z i) The hole concentration in the bar is p(z)=po*[1-z/(2h)]. h ii) V(x=0)=0, and V(x=L)=Vo W Calculate the drift current flowing into x=L surface of the bar. х Fig. 1
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