Step 1: Entire wafer surface of a Si3N4is coated and it is etched away with the help of mask to include source, gate and drain.
Step 2: The contact areas are defined using photolithographic process
Step3: Selective etching of Si3N4 and thin oxide growth
Step 4: Deposition of poly silicon gate
Step 5: thick oxide growth called field oxide and P implantation
Step 6: Metallization and interconnection between substrate and source
a) 1->5->3->4->2->6
b) 1->3->4->2->5->6
c) 1->5->4->3->2->6
d) 1->4->2->5->3->6
Find the sequence of steps involved in fabrication of poly silicon gate MOSFET?
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Find the sequence of steps involved in fabrication of poly silicon gate MOSFET?
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