QUANTUM PHYSICS QUESTION help!!
Consider the semiconductor p-n junction depicted in Figure 5.4. Depletion layer p-doped negatively charged positively charged n-doped Figure 5.4: Electric field E and electrostatic potential in a p-n junction in equilibrium.
2. A bias voltage V that is within the parameters of normal operation of the junction diode is applied. We use the convention that V> 0 corresponds to forward biasing. (a) A generation current 19en (V) of electrons flows from the p- to the n-side of the junction. How does this current depend on the voltage? Motivate your answer. [4] (b) What is the minimum work required to move an electron from the n- to the p-side? [3] (c) A recombination current rec (V) of holes flows from the n- to the p-side of the junction. Explain why Irec (V)/rec (0) = eev/kat by referring to your previous answers. [4] (d) Similar considerations apply to the hole generation and recombination current. Use this fact, together with your previous answers, to express the total electric current flowing through the junction in terms of the bias voltage V, the temperature and the current --I that flows when there is a large reverse bias across the junction. Explain your reasoning. [4]
QUANTUM PHYSICS QUESTION help!!
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