Consider An N P N Si Bjt At 300 K With The Following Parameters 3 Emitter Doping N 10 8 Cm Base Doping N 1017 1 (163.69 KiB) Viewed 29 times
Consider an n-p-n Si-BJT at 300 °K with the following parameters: -3 Emitter doping N₂ = 10¹8 cm-³, Base doping N₂ 1017 cm-³, = Collector doping Nc = 10¹6 cm-3 Base width: x = 0.5 µm, cm² Base Diffusion coefficient D = 20 S cm² Emitter Diffusion coefficient De = 10. S Hole diffusion length Lpb = 15 μm, Electron diffusion length: Lne = 5 μm The lifetime for carriers in the EBJ depletion region is 10-8 S.
3. Find I, Ic, and IB (7 points) 4. If the base width is reduced by a factor of two (2), how will this affect (5 points) a. Current gain (B). b. Base transport factor (ar).
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