Q.5 (i) A Si- PIN photodiode detector has I layer width of 20 um. The P+ layer is very thin around 0.1 um. The detector

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Q.5 (i) A Si- PIN photodiode detector has I layer width of 20 um. The P+ layer is very thin around 0.1 um. The detector

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Q 5 I A Si Pin Photodiode Detector Has I Layer Width Of 20 Um The P Layer Is Very Thin Around 0 1 Um The Detector 1
Q 5 I A Si Pin Photodiode Detector Has I Layer Width Of 20 Um The P Layer Is Very Thin Around 0 1 Um The Detector 1 (43.51 KiB) Viewed 51 times
Q.5 (i) A Si- PIN photodiode detector has I layer width of 20 um. The P+ layer is very thin around 0.1 um. The detector is reversed biased with a voltage of 100 V and illuminated with an optical pulse of 900 nm. Determine the response time or transit time of photo-generated carrier. [consider the electron saturation drift velocity is 105 ms¹, and saturation drift velocity of hole is 7x104 ms ¹]
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