An n-channel A Silicon JFET with 1.58 x 10^16 cm^-3
donors. Height = 2 m, depth = 8 m, and length = 12 m is the channel
geometry.
1) Calculate the transistor's pinch-off
voltage Vp.
2) Calculate the conductivity and
resistivity of the channel assuming the n-channel electrons have a
mobility of 1100 cm2/V.s.
3) Calculate the resistance and conductance
of the channel using its shape.
4)For the following four gate voltages: 0, -1, -2,
and -3 volts, plot ID vs. VD (drain current vs. drain
voltage).
For the drain voltage, select the
following range: 0 V – 10 V
5)Calculate the value of saturation current for
each gate voltage and locate the points on the graph that match. To
create a "saturation point" curve for this device, manually connect
these four points.
An n-channel A Silicon JFET with 1.58 x 10^16 cm^-3 donors. Height = 2 m, depth = 8 m, and length = 12 m is the channel
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