An n-channel A Silicon JFET with 1.58 x 10^16 cm^-3 donors. Height = 2 m, depth = 8 m, and length = 12 m is the channel

Business, Finance, Economics, Accounting, Operations Management, Computer Science, Electrical Engineering, Mechanical Engineering, Civil Engineering, Chemical Engineering, Algebra, Precalculus, Statistics and Probabilty, Advanced Math, Physics, Chemistry, Biology, Nursing, Psychology, Certifications, Tests, Prep, and more.
Post Reply
answerhappygod
Site Admin
Posts: 899603
Joined: Mon Aug 02, 2021 8:13 am

An n-channel A Silicon JFET with 1.58 x 10^16 cm^-3 donors. Height = 2 m, depth = 8 m, and length = 12 m is the channel

Post by answerhappygod »

An n-channel A Silicon JFET with 1.58 x 10^16 cm^-3
donors. Height = 2 m, depth = 8 m, and length = 12 m is the channel
geometry.
1) Calculate the transistor's pinch-off
voltage Vp.
2) Calculate the conductivity and
resistivity of the channel assuming the n-channel electrons have a
mobility of 1100 cm2/V.s.
3) Calculate the resistance and conductance
of the channel using its shape.
4)For the following four gate voltages: 0, -1, -2,
and -3 volts, plot ID vs. VD (drain current vs. drain
voltage).
For the drain voltage, select the
following range: 0 V – 10 V
5)Calculate the value of saturation current for
each gate voltage and locate the points on the graph that match. To
create a "saturation point" curve for this device, manually connect
these four points.
Join a community of subject matter experts. Register for FREE to view solutions, replies, and use search function. Request answer by replying!
Post Reply