- 3 X For An N Type Gaas P Type Alo 3g20 7as Heterojunction At Room Temperature 300k Aec 0 21 Ev Find The Total De 1 (231.16 KiB) Viewed 14 times
-3 -X For an n-type GaAs/p-type Alo.3G20.7As heterojunction at room temperature (300k), AEC = 0.21 eV. Find the total de
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-3 -X For an n-type GaAs/p-type Alo.3G20.7As heterojunction at room temperature (300k), AEC = 0.21 eV. Find the total de
-3 -X For an n-type GaAs/p-type Alo.3G20.7As heterojunction at room temperature (300k), AEC = 0.21 eV. Find the total depletion width at thermal equilibrium when both sides have impurity concentration of 5 x 1015 cm ?. (Hint: the bandgap of Al Gal-x As is given by Eg(x)= 1.424 + 1.247x eV, and the dielectric constant is 12.4 – 3.12x). Assume Nc and Ny for Al Gal-x As the Ne = 4.82·1015.73/2.(0.063+0.083x)3/2 (cm3) and N, = 4.82 1015.T3/2.(0.85-0.14x) 3/2 (cm3). -3 = =