Problem 2.4 (37.5 points) (Si pin photodiodes) A Si pin photodiode has the following characteristics and responsivity: R

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Problem 2 4 37 5 Points Si Pin Photodiodes A Si Pin Photodiode Has The Following Characteristics And Responsivity R 1 (216.02 KiB) Viewed 33 times

Problem 2.4 (37.5 points) (Si pin photodiodes) A Si pin photodiode has the following characteristics and responsivity: Responsivity(A/W) 0.6 0.5 0.4 Wavelength Active area Rise Junction Dark NEP range diameter time capacitance current [W Hz1/21 [nm] [mm] Ips] [pFi IpAl 400 - 1100 1.25 300 24 40 9 x 10-14 The reverse operation voltage for the photodiode is 100 V 0.3 0.2 0.1 0 200 400 600 800 1000 1200 Wavelength(nm) (a) Calculate the i-layer thickness for this device and the internal electric field for a reverse bias of 100 V (Er ~ 11). (b) Given that for the electric field at point (a) the drift velocity for the charge carriers, is around - 6 x 104 m/s, calculate the maximum drift time of the carriers across the i-layer.