- Problem 2.3 (37.5 points) (Optical communications laser) You are designing a VCSEL laser based on In Gai xAsyP1-y - In

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Problem 2 3 37 5 Points Optical Communications Laser You Are Designing A Vcsel Laser Based On In Gai Xasyp1 Y In 1 (187.78 KiB) Viewed 37 times

- Problem 2.3 (37.5 points) (Optical communications laser) You are designing a VCSEL laser based on In Gai xAsyP1-y - InP, for which In Gai-xAsyP1-y, 52 micrometers thick, is the active layer, while alternating layers of In, Gaj-xAsyP1-y (of the same composition as the active layer) and InP form the dielectric mirrors. The bandgap and index of refraction for In Gal-xAsyP1-y (with y=(1-x)/0.465) are given by the equations below, while the absorption is given by the curve on the right: 1x10 In GaAs P 1x10 E,(y)(eV) = 1.35 -0.72 y +0.12 y? 1x106 (m-1) 2.054 n(y) = 6.287 + 1.35 1- 0.6245 a[um]· E, (y)[eV] 1x10 1x104 1x103 02 0.6 0.4 0.8 10 12 14 16 18 Wavelength (um) (a) What is the composition of the active layer for a design wavelength of 1300 nm? (b) What is the thickness of the layers forming the dielectric mirrors? (c) What is the mode number of the peak radiation?